Taiwanese scientists develop high-efficiency silicon LED heterostructure
Date:2010-11-24 16:04
silicon nano-crystallite embedded in the thickness of about 9.2 nm of silicon dioxide layer. Electron and hole respectively n-type ZnO films with p-type Si substrate, tunneling (tunneling) through the silicon dioxide layer into the silicon nano-crystallite. Because of electron hole pairs are confined in a small ceramic, the silicon dioxide on the role of ceramic surface defect repair again, so light generated electron hole pairs with (radiative recombination) greatly increased the probability,
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08/27 02:46